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STM32F103RG 数据表(PDF) 42 Page - STMicroelectronics |
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STM32F103RG 数据表(HTML) 42 Page - STMicroelectronics |
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42 / 120 page ![]() Electrical characteristics STM32F103xF, STM32F103xG 42/120 Doc ID 16554 Rev 3 5.3.2 Operating conditions at power-up / power-down The parameters given in Table 11 are derived from tests performed under the ambient temperature condition summarized in Table 10. Table 11. Operating conditions at power-up / power-down 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 12 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 ∞ µs/V VDD fall time rate 20 ∞ Table 12. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.1 2.18 2.26 V PLS[2:0]=000 (falling edge) 2 2.08 2.16 V PLS[2:0]=001 (rising edge) 2.19 2.28 2.37 V PLS[2:0]=001 (falling edge) 2.09 2.18 2.27 V PLS[2:0]=010 (rising edge) 2.28 2.38 2.48 V PLS[2:0]=010 (falling edge) 2.18 2.28 2.38 V PLS[2:0]=011 (rising edge) 2.38 2.48 2.58 V PLS[2:0]=011 (falling edge) 2.28 2.38 2.48 V PLS[2:0]=100 (rising edge) 2.47 2.58 2.69 V PLS[2:0]=100 (falling edge) 2.37 2.48 2.59 V PLS[2:0]=101 (rising edge) 2.57 2.68 2.79 V PLS[2:0]=101 (falling edge) 2.47 2.58 2.69 V PLS[2:0]=110 (rising edge) 2.66 2.78 2.9 V PLS[2:0]=110 (falling edge) 2.56 2.68 2.8 V PLS[2:0]=111 (rising edge) 2.76 2.88 3 V PLS[2:0]=111 (falling edge) 2.66 2.78 2.9 V VPVDhyst (2) PVD hysteresis - 100 - mV VPOR/PDR Power on/power down reset threshold Falling edge 1.8(1) 1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst (2) PDR hysteresis - 40 - mV TRSTTEMPO (2) 2. Guaranteed by design, not tested in production. Reset temporization 1 2.5 4.5 mS |
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