STM32F103RG datasheet(84/120 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F103xF, STM32F103xG

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Doc ID 16554 Rev 3

5.3.14

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 49 are derived from tests

performed under the conditions summarized in Table 10. All I/Os are CMOS and TTL

compliant.

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 40 and Figure 41 for standard I/Os, and

in Figure 42 and Figure 43 for 5 V tolerant I/Os.

Table 49.

I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Standard IO input low

level voltage

–0.3

0.28*(VDD-2

V)+0.8 V

IO FT(1) input low level

voltage

–0.3

0.32*(VDD-2

V)+0.75 V

VIH

Standard IO input high

level voltage

0.41*(VDD-2

V)+1.3 V

-VDD+0.3

IO FT(1) input high level

voltage

VDD > 2 V

0.42*(VDD-2

V)+1 V

5.5

VDD ≤2 V

5.2

Vhys

Standard IO Schmitt

trigger voltage

hysteresis(2)

200

IO FT Schmitt trigger

voltage hysteresis(2)

5% VDD

(3)

-mV

Ilkg

Input leakage current (4)

VSS ≤VIN ≤VDD

Standard I/Os

±1

µA

VIN= 5 V, I/O FT

RPU

Weak pull-up equivalent

resistor(5)

VIN = VSS

RPD

Weak pull-down

equivalent resistor(5)

VIN = VDD

CIO

I/O pin capacitance

FT = Five-volt tolerant. In order to sustain a voltage higher than VDD+0.3 the internal pull-up/pull-down resistors must be

disabled.

Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.

With a minimum of 100 mV.

Leakage could be higher than max. if negative current is injected on adjacent pins.

Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order)

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