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STM32F217VG 数据表(PDF) 67 Page - STMicroelectronics

部件名 STM32F217VG
功能描述  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  173 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F217VG 数据表(HTML) 67 Page - STMicroelectronics

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STM32F21xxx
Electrical characteristics
Doc ID 17050 Rev 8
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5.3.5
Embedded reset and power control block characteristics
The parameters given in Table 16 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 11.
Table 16.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising
edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling
edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising
edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling
edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising
edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling
edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising
edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling
edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising
edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling
edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising
edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling
edge)
2.65
2.84
3.02
V
PLS[2:0]=110 (rising
edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling
edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising
edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling
edge)
2.95
3.03
3.09
V
VPVDhyst
(2)
PVD hysteresis
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60(1)
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst
(2)
PDR hysteresis
-
40
-
mV



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