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STM32F217VG 数据表(PDF) 84 Page - STMicroelectronics |
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STM32F217VG 数据表(HTML) 84 Page - STMicroelectronics |
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84 / 173 page  Electrical characteristics STM32F21xxx 84/173 Doc ID 17050 Rev 8 5.3.9 Internal clock source characteristics The parameters given in Table 29 and Table 30 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 11. High-speed internal (HSI) RC oscillator Figure 31. ACCHSI versus temperature Table 29. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. -- 1 % Factory- calibrated TA = –40 to 105 °C –8 - 4.5 % TA = –10 to 85 °C –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI) (3) 3. Guaranteed by design, not tested in production. HSI oscillator startup time -2.2 4 µs IDD(HSI) HSI oscillator power consumption -60 80 µA MS19012V2 -8 -6 -4 -2 0 2 4 6 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Temperature (°C) max avg min |
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