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STM32F217VG 数据表(PDF) 76 Page - STMicroelectronics |
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STM32F217VG 数据表(HTML) 76 Page - STMicroelectronics |
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76 / 173 page ![]() Electrical characteristics STM32F21xxx 76/173 Doc ID 17050 Rev 8 On-chip peripheral current consumption The current consumption of the on-chip peripherals is given in Table 23. The MCU is placed under the following conditions: Table 21. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ Max(1) Unit TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.8 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_STBY Supply current in Standby mode Backup SRAM ON, low-speed oscillator and RTC ON 3.0 3.4 4.0 15.1 25.8 µA Backup SRAM OFF, low- speed oscillator and RTC ON 2.4 2.7 3.3 12.4 20.5 Backup SRAM ON, RTC OFF 2.4 2.6 3.0 12.5 24.8 Backup SRAM OFF, RTC OFF 1.7 1.9 2.2 9.8 19.2 1. Based on characterization, not tested in production. Table 22. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions Typ Max(1) Unit TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.8 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator and RTC ON 1.29 1.42 1.68 12 19 µA Backup SRAM OFF, low-speed oscillator and RTC ON 0.62 0.73 0.96 8 10 Backup SRAM ON, RTC OFF 0.79 0.81 0.86 9 16 Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 5 7 1. Based on characterization, not tested in production. |
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