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STM32F217VG 数据表(PDF) 123 Page - STMicroelectronics

部件名 STM32F217VG
功能描述  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  173 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F217VG 数据表(HTML) 123 Page - STMicroelectronics

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STM32F21xxx
Electrical characteristics
Doc ID 17050 Rev 8
123/173
Figure 53.
Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
1.
Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
Table 69.
Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)
1.
CL = 30 pF.
2.
Based on characterization, not tested in production.
Symbol
Parameter
Min
Max
Unit
tw(NE)
FSMC_NE low time
2THCLK– 0.5
2THCLK+0.5
ns
tv(NOE_NE)
FSMC_NEx low to FSMC_NOE low
0.5
2.5
ns
tw(NOE)
FSMC_NOE low time
2THCLK- 1
2THCLK+ 0.5
ns
th(NE_NOE)
FSMC_NOE high to FSMC_NE high hold time
0
-
ns
tv(A_NE)
FSMC_NEx low to FSMC_A valid
-
4
ns
th(A_NOE)
Address hold time after FSMC_NOE high
0
-
ns
tv(BL_NE)
FSMC_NEx low to FSMC_BL valid
-
0.5
ns
th(BL_NOE)
FSMC_BL hold time after FSMC_NOE high
0
-
ns
tsu(Data_NE) Data to FSMC_NEx high setup time
THCLK+ 0.5
-
ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time
THCLK+ 2.5
-
ns
th(Data_NOE) Data hold time after FSMC_NOE high
0
-
ns
th(Data_NE)
Data hold time after FSMC_NEx high
0
-
ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low
-
2.5
ns
tw(NADV)
FSMC_NADV low time
-
THCLK– 0.5
ns
Data
FSMC_NE
FSMC_NBL[1:0]
FSMC_D[15:0]
tv(BL_NE)
t h(Data_NE)
FSMC_NOE
Address
FSMC_A[25:0]
tv(A_NE)
FSMC_NWE
tsu(Data_NE)
tw(NE)
ai14991c
w(NOE)
t
tv(NOE_NE)
t h(NE_NOE)
th(Data_NOE)
t h(A_NOE)
t h(BL_NOE)
tsu(Data_NOE)
FSMC_NADV(1)
t v(NADV_NE)
tw(NADV)



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