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STM32F207IE 数据表(PDF) 70 Page - STMicroelectronics |
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STM32F207IE 数据表(HTML) 70 Page - STMicroelectronics |
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70 / 178 page ![]() Electrical characteristics STM32F20xxx 70/178 DocID15818 Rev 11 VBAT Backup operating voltage 1.65 3.6 V VIN I/O input voltage FT and TTa I/O TBD TBD BOOT0 TBD TBD VCAP1 Internal core voltage to be supplied externally in REGOFF mode 1.1 1.3 V VCAP2 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(5) LQFP64 - 444 mW WLCSP64+2 - 392 LQFP100 - 434 LQFP144 - 500 LQFP176 - 526 UFBGA176 - 513 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(6) –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(6) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 1. TBD stands for “to be defined”. 2. On devices in WLCSP64+2 package, if IRROFF is set to VDD, the supply voltage can drop to 1.7 V when the device operates in the 0 to 70 °C temperature range using an external power supply supervisor (see Section 3.16). 3. When the ADC is used, refer to Table 66: ADC characteristics. 4. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and power-down operation. 5. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. 6. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. Table 14. General operating conditions(1) (continued) Symbol Parameter Conditions Min Max Unit |
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