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STM32F207IE 数据表(PDF) 91 Page - STMicroelectronics |
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STM32F207IE 数据表(HTML) 91 Page - STMicroelectronics |
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91 / 178 page  DocID15818 Rev 11 91/178 STM32F20xxx Electrical characteristics 177 Figure 34. ACCHSI versus temperature Low-speed internal (LSI) RC oscillator 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 3. Guaranteed by design, not tested in production. Table 33. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Based on characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA MS19012V2 -8 -6 -4 -2 0 2 4 6 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Temperature (°C) max avg min |
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