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STM32F415RG 数据表(PDF) 106 Page - STMicroelectronics |
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STM32F415RG 数据表(HTML) 106 Page - STMicroelectronics |
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106 / 186 page ![]() Electrical characteristics STM32F415xx, STM32F417xx 106/186 DocID022063 Rev 4 tERASE64KB Sector (64 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 1200 2400 ms Program/erase parallelism (PSIZE) = x 16 - 700 1400 Program/erase parallelism (PSIZE) = x 32 - 550 1100 tERASE128KB Sector (128 KB) erase time Program/erase parallelism (PSIZE) = x 8 -2 4 s Program/erase parallelism (PSIZE) = x 16 -1.3 2.6 Program/erase parallelism (PSIZE) = x 32 -1 2 tME Mass erase time Program/erase parallelism (PSIZE) = x 8 -16 32 s Program/erase parallelism (PSIZE) = x 16 -11 22 Program/erase parallelism (PSIZE) = x 32 -8 16 Vprog Programming voltage 32-bit program operation 2.7 - 3.6 V 16-bit program operation 2.1 - 3.6 V 8-bit program operation 1.8 - 3.6 V 1. Based on characterization, not tested in production. 2. The maximum programming time is measured after 100K erase operations. Table 39. Flash memory programming (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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