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DS80C310 数据表(PDF) 13 Page - Dallas Semiconductor |
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DS80C310 数据表(HTML) 13 Page - Dallas Semiconductor |
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13 / 23 page ![]() DS80C310 13 of 23 AC ELECTRICAL CHARACTERISTICS 25 MHz VARIABLE CLOCK PARAMETER SYMBOL MIN MAX MIN MAX NOTES Oscillator Freq. (Ext. Osc.) (Ext. Crystal) 1/tCLCL 0 1 33 33 0 1 33 33 MHz ALe Pulse Width tLHLL 40 1.5tCLCL-5 ns Port 0 Address Valid to ALE Low tAVLL 10 0.5tCLCL-5 ns Address Hold after ALE Low tLLAX1 10 0.5tCLCL-5 ns ALE Low to Valid Instruction In tLLIV 56 2.5tCLCL-20 ns ALE Low to PSEN Low tLLPL 10 0.5tCLCL-5 ns PSEN Pulse Width tPLPH 55 2tCLCL-5 ns PSEN Low to Valid Instr. In tPLIV 41 2tCLCL-20 ns Input Instruction Hold after PSEN tPXIX 0 0 ns Input Instruction Float after PSEN tPXIZ 26 tCLCL-5 ns Port 0 Address to Valid Instr. In tAVIV 71 3tCLCL-20 ns Port 2 Address to Valid Instr. In tAVIV2 81 3.5tCLCL-25 ns PSEN Low to Address Float tPLAZ 0 0 ns NOTES FOR AC ELECTRICAL CHARACTERISTICS All parameters apply to both commercial and ind ustrial temperature range operation unless otherwise noted. All signals characterized with load capacitance of 80 pF except Port 0, ALE, PSEN , and WR with 100 pF. Interfacing to memory devices with float times (turn off times) over 25 ns may cause contention. This will not damage the parts, but will cause an increase in operating current. Specifications assume a 50% duty cycle for the oscillator. Port 2 and ALE timing will change in relation to duty cycle variation. |
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