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M95512-R 数据表(PDF) 1 Page - STMicroelectronics |
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M95512-R 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 50 page ![]() This is information on a product in full production. June 2013 DocID11124 Rev 21 1/50 1 M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet - production data Features • Compatible with the Serial Peripheral Interface (SPI) bus • Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes • Write – Byte Write within 5 ms – Page Write within 5 ms • Additional Write lockable page (Identification page) • Write Protect: quarter, half or whole memory array • High-speed clock: 16 MHz • Single supply voltage: – 2.5 V to 5.5 V for M95512-W – 1.8 V to 5.5 V for M95512-R and M95512- DR – 1.7 V to 5.5 V for M95512-DF • Operating temperature range: from -40°C up to +85°C • Enhanced ESD protection • More than 4 million Write cycles • More than 200-year data retention • Packages – RoHS compliant and halogen-free (ECOPACK®) SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WLCSP (CS) UFDFPN8 2 x 3 mm (MC) (preliminary data) www.st.com |
类似零件编号 - M95512-R |
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类似说明 - M95512-R |
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