M95512-R datasheet(37/50 Pages) STMICROELECTRONICS

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M95512-W M95512-R M95512-DR M95512-DF

DC and AC parameters

Table 18. DC characteristics (M95512-DF products, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in Table 10 (1)

Min

Max

Unit

ILI

Input leakage current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage current

S = VCC, voltage applied on Q = VSS or VCC

-± 2

µA

ICC

Supply current (Read)

C = 0.1 VCC/0.9 VCC at 5 MHz, VCC = 1.7 V,

Q = open

-2.5

ICC0(2) Supply current (Write)

During tW, S = VCC, 1.7 V < VCC < 2.5 V

1.5

ICC1

Supply current (Standby

Power mode)

S = VCC, VCC = 1.7 V, VIN = VSS or VCC

-1(3)

µA

VIL

Input low voltage

–0.45

0.3 VCC

VIH

Input high voltage

0.7 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.7 V

0.3

VOH

Output high voltage

IOH = –0.1 mA, VCC = 1.7 V

0.8 VCC

-V

1. If the application uses the M95512-DF device with 2.5 V

≤ VCC < 5.5 V and -40 °C < TA < +85 °C, please

refer to Table 16 instead of the above table.

2. Characterized only, not tested in production.

3. 1 µA for devices identified from date code 301 (year 2013, W01), 3 µA for previous devices

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