M95512-R datasheet(36/50 Pages) STMICROELECTRONICS

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DC and AC parameters

M95512-W M95512-R M95512-DR M95512-DF

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DocID11124 Rev 21

Table 17. DC characteristics (M95512-R and M95512-DR products, device grade 6)

Symbol

Parameter

Test conditions in addition to those defined

in Table 9 (1)

Min

Max

Unit

ILI

Input leakage current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage current

S = VCC, voltage applied on Q = VSS or VCC

-± 2

µA

ICC

Supply current (Read)

C = 0.1 VCC/0.9 VCC at max clock

frequency(2),

VCC = 1.8 V, Q = open

-2.5

ICC0(3) Supply current (Write)

During tW, S = VCC, 1.8 V < VCC < 2.5 V

1.5

ICC1

Supply current (Standby

Power mode)

S = VCC, VCC = 1.8 V, VIN = VSS or VCC

-1(4)

µA

VIL

Input low voltage

–0.45

0.3 VCC

VIH

Input high voltage

0.7 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.8 V

0.3

VOH

Output high voltage

IOH = –0.1 mA, VCC = 1.8 V

0.8 VCC

-V

1. If the application uses the M95512-R or M95512-DR with 2.5 V

≤ VCC < 5.5 V and -40 °C < TA < +85 °C,

please refer to Table 16 and Table 15 instead of the above table.

2. Max clock frequency is 5 MHz (was 2 MHz for previous products identified with process letters AB).

3. Characterized only, not tested in production.

4. 1 µA for devices from date code 301 (year 2013, W01), 3 µA for previous devices.

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