Absolute Maximum Ratings

VDD referenced to GND . . . . . . . . . . . . . . . . . . . . . . 7V

Operating temperature under bias. . . . . . . . . . . . . . . . 0

°C to 70°C

Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -40

°C to +150°C

Voltage on I/O pins referenced to GND. . . . . . . . . . . GND -0.5V to VDD +0.5V

Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above those indicated in the operational sections of the

specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.

Electrical Characteristics

Maximum Ratings

PARAMETER

SYMBOL

MIN

MAX

UNITS

Supply voltage relative to GND

VDD

-0.5

7.0

Volts

Input voltage with respect to GND

-0.5

VDD +0.5

Volts

Operating temperature

0+70

°C

Storage temperature

-65

+150

°C

Max soldering temperature (10 sec)

+260

°C

Junction temperature

+125

°C

Package power dissipation

350

mWatts

DC Characteristics

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

High level input voltage

2.0

V

Low level input voltage

0.8

V

High level CMOS output voltage

3.84

V

Low level output voltage

0.4

V

Input high current

100

µA

Input low current

-250

µA

Output leakage current

(tristate)

10

µA

Power supply current

15

65

ma

Power supply current (typical)

@60 MHz

35

ma

Analog power supply current

20

ma

Power-down current (Mode 1)

67.5

ma

Power-down current (Mode 2)

25

50

µA

Input capacitance

10

pF

ICS82C404

8