M24C64-R datasheet(27/45 Pages) STMICROELECTRONICS

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M24C64-W M24C64-R M24C64-F

Table 14. DC characteristics (M24C64-R, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition to

those in Table 7)

1. If the application uses the voltage range R device with 2.5 V

< Vcc < 5.5 V and -40 °C < TA < +85 °C,

please refer to Table 13 instead of this table.

Min.

Max.

Unit

ILI

Input leakage current

(E0, E1, E2, SCL, SDA)

VIN = VSS or VCC, device in

Standby mode

-± 2

µA

ILO

Output leakage current

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

0.8

fc= 1 MHz(2)

2. Only for devices operating at fC max = 1 MHz (see note (1) in Table 17).

-2.5

ICC0

Supply current (Write)(3)

3. For devices identified with process letter K or T

During tW,

1.8 V

≤VCC 2.5 V

-1.5(4)

4. Characterized value, not tested in production.

ICC1

Standby supply current

Device not selected(5),

VIN = VSS or VCC, VCC = 1.8 V

5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

-1

µA

VIL

Input low voltage

(SCL, SDA, WC, E2, E1,

E0)(6)

6. Ei inputs should be tied to Vss (see Section 2.3).

1.8 V

≤ VCC < 2.5 V

–0.45

0.25 VCC V

VIH

Input high voltage

(SCL, SDA)

1.8 V

≤ VCC < 2.5 V

0.75 VCC

6.5

Input high voltage

(WC)(7)

7. Ei inputs should be tied to Vcc (see Section 2.3).

1.8 V

≤ VCC < 2.5 V

0.75 VCC VCC+ 0.6 V

VOL

Output low voltage

IOL = 1 mA(8), VCC = 1.8 V

8. IOL = 0.7 mA for previous devices (identified by process letter P).

-0.2

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