IRFP044N

PD - 9.1410A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

S

D

G

Description

TO-247AC

Parameter

Max.

Units

53

37

A

Pulsed Drain Current

…

180

Power Dissipation

120

W

Linear Derating Factor

0.77

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚…

230

mJ

Avalanche Current



28

A

Repetitive Avalanche Energy



12

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ…

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.3

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

Junction-to-Ambient

–––

40

Thermal Resistance

8/25/97