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AN3112 数据表(PDF) 16 Page - STMicroelectronics |
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AN3112 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 36 page ![]() Designing a fixed-off-time PFC AN3112 16/36 Doc ID 16820 Rev 3 Figure 9. The effect of fixing off-time - boundary between DCM and CCM The effect of fixing the off-time is to generate a continuous conduction mode in the center region of the line half-cycle between the two transition angles. Close to the zero-crossing, the system works in discontinuous conduction mode and in transition mode at the boundary. The inductor core size is determined assuming a peak flux density Bx ~0.25 T (depending on the ferrite grade selected and relevant specific losses) and calculating the maximum current according to Equation 15 as a function of the maximum current sense pin clamping voltage and sense resistor value. DC and AC copper losses and ferrite losses must also be calculated to determine the maximum temperature rise of the inductor. 4.3.5 Power MOSFET selection and power dissipation calculation The selection of the MOSFET concerns mainly its RDS(on), basically proportional to the output power. The MOSFET breakdown voltage is selected considering the PFC nominal output voltage (4) adding some margin (20%) to guarantee reliable operation. Therefore, a voltage rating of 500 V (1.2 · Vout = 480 V) is selected. Using its current rating as a rule of thumb, we can select a device having ~ 3 times the RMS switch current ( Equation 16) but, the power dissipation calculation gives the final confirmation that the selected device is the right one for the circuit, also taking the heat sink dimensions into account. For example, in a 400 W PFC application two parallel STP12NM50FP MOSFETs can be selected. The MOSFET's power dissipation depends on conduction, switching and capacitive losses. The conduction losses at maximum load and minimum input voltage are calculated by: Equation 29 Because, normally in the datasheets the RDS(on) is given at an ambient temperature (25 °C), to correctly calculate the conduction losses at 100°C (typical MOSFET junction operating DCM TM CCM TOF F θ1 Half Line Cycle DCM TM CCM TOF F θ1 Half Line Cycle ()2 rms on cond ) VAC ( ISW RDS ) VAC ( P ⋅ = |
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