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AN3303 数据表(PDF) 18 Page - STMicroelectronics |
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AN3303 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 27 page ![]() Power losses and thermal design AN3303 18/27 Doc ID 18164 Rev 2 5 Power losses and thermal design SR dramatically reduces output rectification power losses enabling the design of more efficient power supplies and, even more significant, with a considerable reduction of converter secondary side size. To get a better idea of the improvement obtained by implementing SR with the SRK2000, power loss calculation in a 12 V-150 W application (see Reference 2) is illustrated below. 5.1 Power losses calculation The average output current of a 12 V-150 W power supply at nominal load is: Equation 4 The average current flowing through each output rectifier is: Equation 5 and the RMS current is approximately: Equation 6 To evaluate power losses, a suitable diode and MOSFET part numbers were selected. In the case of diode rectification the STPS20L45C was selected (see Reference 3). The power losses associated to each rectifier can be calculated using the formula indicated in the STPS20L45C datasheet: Equation 7 In the case of SR, the selected MOSFET is the STL140N4LLF5, which is actually mounted on EVLSRK2000-L-40. Capacitive losses associated to the MOSFET turn-on are negligible because each MOSFET is turned on after its body diode starts conducting. Also losses at turn-off are of minor concern because, after the MOSFET is turned off, the current goes on flowing through the diode. Supposing the MOSFET turn-on and turn-off timing are optimized as described in Section 3, losses associated to the current flowing through the body diodes can be neglected too. Most SR MOSFET losses can be summarized into conduction losses: Equation 8 I 0 P 0 V 0 ------ 12.50 A = = I avg I 0 2 ---- 6.25 A = = I RMS π 4 ---I 0 9.82 A = = P Diode 0.28 I avg 0.022 I RMS 2 3.87 W = ⋅ + ⋅ = P MOS R DS on () I RMS 2 265 mW = ⋅ = |
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