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AN3303 数据表(PDF) 20 Page - STMicroelectronics |
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AN3303 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 27 page ![]() Power losses and thermal design AN3303 20/27 Doc ID 18164 Rev 2 Considering now the case with SR: again the thermal rise is 65 °C. Based on the power dissipation per MOSFET calculated in Equation 8, the maximum junction-to-ambient thermal resistance allowed is: Equation 14 That means that a heatsink is not required, just some copper area is needed, calculated according to the SRK2000 datasheet indication. The same is true for the SRK2000: Equation 15 This is higher than the controller junction-to-ambient thermal resistance (150 °C/W). R th j amb – () 65 °C P MOS --------------- 245 °CW ⁄ = = R th j amb – () 65 °C P SRK2000 ------------------------- 409 °CW ⁄ = = |
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