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AN2647 数据表(PDF) 4 Page - STMicroelectronics |
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AN2647 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 34 page ![]() Interfacing with asynchronous memory AN2647 4/34 1 Interfacing with asynchronous memory 1.1 Multiplexed or non-multiplexed EMI bus selection The multiplexed EMI bus is selected if you have a 16-bit system bus or using 16-bit memory device. The multiplexed bus requires a 16-bit address latch, as most memory devices do not accept multiplexed address/data input. The 8-bit non-multiplexed bus is suitable for 8-bit memory or I/O devices. In this configuration, the EMI memory banks are limited to 64 KB each, as there are only 16 address lines available. In general the non-multiplexed bus has a shorter bus cycle that can be completed in one bus clock period (tBCLK) while the multiplexed bus takes minimum of 3 BCLK clocks. The multiplexed bus has a 16 bit data bus, and can provide high data transfer rate for memory device like PSRAM that supports burst mode. The DMA Controller can be programmed to perform burst data transfer between the internal SRAM and the EMI bus. 1.1.1 Multiplexed EMI bus configuration The multiplexed bus has different bus signals and port assignments than the non- multiplexed bus. As shown in Table 1, Ports 8 and 9 provide the multiplexed 16 bit address and data bus (AD0-AD15), the optional higher address A16-A23 are assigned to Port 7. Figure 1. & Figure 2. show a typical EMI multiplexed bus connecting to two 16-bit memory devices: a 4 MB ISSI SRAM and a 4 MB SPANSION Flash memory. The SN74LVC16373A is a high speed 16-bit address latch with maximum tPD delay of 4.2 ns. Note only four pins on Port 7 are address lines, the remaining four pins are for other I/O functions. Table 1. Multiplexed bus signals Signal name Pin / Port assignment Signal description AD0-AD7 Port 8 Multiplexed address/data bus AD0-AD7 AD8-AD15 Port 9 Multiplexed address/data bus AD8-AD15 A16-A23 Port 7 Address A16-A23, pin configurable ALE EMI_ALE Address Latch signal. Polarity and width is programmable Read EMI_RDn Read signal Write Low (Low Byte Select) EMI_BWRn (EMI_WRLn or EMI_LBn) Low Byte (D0-D7) Write signal or Low Byte Select signal. Write High (High Byte Select) EMI_WRHn (EMI_UBn) High Byte (D8-D15) Write signal or High Byte Select signal Write Enable EMI_WEn Write Enable signal, use together with the UB/LB byte select signals in synchronous mode. CS0-CS3 Port 0(P0.4-P0.7) or Port 5 (P5.4-P5.7) or Port 7 (P7.4-P7.7) One chip select for each of the 4 Memory Banks.Can be assigned to any of the 3 port. |
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