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LT1336CS 数据表(PDF) 11 Page - Linear Technology |
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LT1336CS 数据表(HTML) 11 Page - Linear Technology |
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11 / 16 page ![]() 11 LT1336 APPLICATIONS INFORMATION Using the components as shown in Figure 2 the flyback regulator will run at around 800kHz. To lower the fre- quency CFILTER can be increased and to increase the frequency CFILTER can be decreased. Power MOSFET Selection Since the LT1336 inherently protects the top and bottom MOSFETs from simultaneous conduction, there are no size or matching constraints. Therefore, selection can be made based on the operating voltage and RDS(ON) require- ments. The MOSFET BVDSS should be at least equal to the LT1336 absolute maximum operating voltage. For a maxi- mum operating HV supply of 60V, the MOSFET BVDSS should be from 60V to 100V. The MOSFET RDS(ON) is specified at TJ = 25°C and is generally chosen based on the operating efficiency re- quired as long as the maximum MOSFET junction tem- perature is not exceeded. The dissipation in each MOSFET is given by: PD I R DS DS ON = () + () ( ) 2 1 ∂ where D is the duty cycle and ∂ is the increase in RDS(ON) at the anticipated MOSFET junction temperature. From this equation the required RDS(ON) can be derived: R P DI DS ON DS ( ) = () +() 2 1 ∂ For example, if the MOSFET loss is to be limited to 2W when operating at 5A and a 90% duty cycle, the required RDS(ON) would be 0.089Ω/(1 + ∂). (1 + ∂) is given for each MOSFET in the form of a normalized RDS(ON) vs tempera- ture curve, but ∂ = 0.007/°C can be used as an approxima- tion for low voltage MOSFETs. Thus, if TA = 85°C and the available heat sinking has a thermal resistance of 20 °C/W, the MOSFET junction temperature will be 125 °C and ∂ = 0.007(125 – 25) = 0.7. This means that the required RDS(ON) of the MOSFET will be 0.089Ω/1.7 = 0.0523Ω, which can be satisfied by an IRFZ34 manufactured by International Rectifier. Transition losses result from the power dissipated in each MOSFET during the time it is transitioning from off to on, or from on to off. These losses are proportional to (f)(HV)2 and vary from insignificant to being a limiting factor on operating frequency in some high voltage applications. Figure 2. Using the Flyback Regulator The flyback regulator works as follows: when switch S is on, the primary current ramps up as the magnetic field builds up. The magnetic field in the core induces a voltage on the secondary winding equal to V +. However, no power is transferred to VBOOST because the rectifier diode D2 is reverse biased. The energy is stored in the transformer’s magnetic field. When the primary inductor peak current is reached, the switch is turned off. Energy is no longer transferred to the transformer causing the magnetic field to collapse. The collapsing magnetic field induces a change in voltage across the transformer’s windings. During this transition the Switch pin’s voltage flies to 10.6V plus a diode above V +, the secondary forward biases the rectifier diode D2 and the transformer’s energy is transferred to VBOOST. Meanwhile the primary inductor current goes to zero and the voltage at ISENSE decays to the lower inductor current threshold with a time constant of (RSENSE)(CFILTER), thus completing the cycle. SWITCH SV+ PV+ RSENSE 2 Ω 1/4W D2 1N4148 40V 1N4148 24V 1000pF 6.2k S HV = 60V MAX 1336 F02 LT1336 T1* 1:1 D1 1N4148 * COILTRONICS CTX100-1P + SWGND ISENSE CBOOST 1 µF CFILTER 0.1 µF – + VBOOST + TGATEDR TGATEFB BOOST TSOURCE |
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