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LTC3853 数据表(PDF) 4 Page - Linear Technology |
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LTC3853 数据表(HTML) 4 Page - Linear Technology |
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4 / 36 page ![]() LTC3853 4 3853fc For more information www.linear.com/LTC3853 ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The junction temperature, TJ, is calculated from the ambient temperature TA and power dissipation PD according to the following formulas: LTC3853UJ: TJ = TA + (PD • 33°C/W) Note 3: The LTC3853 is tested under pulsed load conditions such that TJ ≈ TA. The LTC3853E is guaranteed to meet performance specifications from 0°C to 85°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3853I is guaranteed over the –40°C to 125°C operating junction temperature range. The LTC3853H is guaranteed over the –40°C to 150°C operating junction temperature range and the LTC3853MP is tested and The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C (Note 3), VIN = 15V, VRUN1,2,3 = 5V, unless otherwise noted. guaranteed over the –55°C to 150°C operating junction temperature range. High junction temperatures degrade operating lifetimes; operating lifetime is derated for junction temperatures greater than 125°C. The maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal resistance and other environmental factors. Note 4: The LTC3853 is tested in a feedback loop that servos VITH1,2,3 to a specified voltage and measures the resultant VFB1,2,3. Note 5: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See the Applications Information section. Note 6: Rise and fall times are measured using 10% and 90% levels. Delay times are measured using 50% levels. Note 7: The minimum on-time condition is specified for an inductor peak-to-peak ripple current ≥40% of IMAX (see Minimum On-Time Considerations in the Applications Information section). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Bottom Gate Off to Top Gate On Delay Top Switch-On Delay Time (Note 6) CLOAD = 3300pF Each Driver 30 ns tON(MIN) Minimum On-Time (Note 7) 90 ns INTVCC Linear Regulator VINTVCC Internal VCC Voltage 7V < VIN < 24V 4.8 5 5.2 V INTVCC Load Regulation ICC = 0mA to 50mA 0.5 2 % VEXTVCC EXTVCC Switchover Voltage EXTVCC Ramping Positive l 4.5 4.7 V EXTVCC Voltage Drop ICC = 20mA, VEXTVCC = 5V 30 75 mV EXTVCC Hysteresis 200 mV Oscillator and Phase-Locked Loop Nominal Frequency VFREQ = 1.2V 450 500 550 kHz Lowest Frequency VFREQ = 0V 210 250 290 kHz Highest Frequency VFREQ ≥ 2.4V 670 750 830 kHz Channel 2-Channel 1 Phase Channel 3-Channel 2 Phase Channel 1-Channel 3 Phase 120 120 120 Deg Deg Deg Channel 2-Channel 1 Phase Channel 3-Channel 2 Phase Channel 1-Channel 3 Phase VFB2 Tied to VIN Through 200kΩ 180 60 120 Deg Deg Deg MODE/PLLIN Input Resistance 250 kΩ IFREQ Phase Detector Output Current Sinking Capability Sourcing Capability fMODE < fOSC fMODE > fOSC –13 13 µA µA PGOOD Outputs PGOOD Voltage Low IPGOOD = 2mA 0.1 0.3 V IPGOOD PGOOD Leakage Current VPGOOD = 5V ±2 µA PGOOD Trip Level VFB with Respect to Set Regulated Voltage VFB Ramping Negative VFB Ramping Positive –5 5 –7.5 7.5 –10 10 % % |
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