STCH02 datasheet(7/24 Pages) STMICROELECTRONICS

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STCH02

Device description and block diagram

Table 5. Electrical characteristics

(Tj = - 25° to 125 °C, VDD = 14 V, unless otherwise specified)

Symbol

Parameter

Test condition

Min.

Typ. Max.

Unit

High voltage start-up generator

VHV

HV voltage

IHV < 2 µA, Tj = 25 °C

650

ILEAKAGE HV leakage current

VHV = 400 V, Tj = 25 °C

µA

HVSTART HV start voltage

ICHARGE

VDD start-up charge current

VHV > HVSTART; VDD  0.6 V or

after protection tripping

0.3

0.6

0.9

VHV > HVSTART;

2 < VDD < VDDOn

4.5

10.3

VDD-FOLD VDD foldback threshold

VHV > HVSTART

Supply voltage

VDD

Operating range

After turn-on

11.5

VDD-ON

Turn-on threshold

VDD-OFF

Restart threshold

VFB > VFBF

910

VDD-UVLO UVLO threshold

VFB > VFBF

8.55

9.5

10.45

VFB < (0.6 - 65 mV)

6.75

7.5

8.25

VDDR

VDD restart voltage (falling)

After protection tripping

4.5

In burst mode

3.2

VZ clamping voltage

IDD = 20 mA

26.5

Supply current

Quiescent current

Burst operation

190

230

µA

IDD

Operating supply current

Cout = 1 nF, fsw = 100 KHz

2.3

2.7

IDD-FAULT Fault quiescent current

During hiccup

330

420

µA

Start-up timer and frequency limit

TSTART

Start timer period

220

µs

FLIM

Internal frequency limit

260

kHz

Zero current detector

IZCDb

Input bias current

VZCD = 0.1 to 2.7 V

µA

VZCDH

Upper clamp voltage

IZCD = 1 mA

VZCDL

Lower clamp voltage

IZCD = - 1 mA

-60

VZCDA

Arming voltage

Positive-going edge

110

140

VZCDT

Triggering voltage

Negative-going edge

TBLANK

Trigger blanking time after MOSFET's

turn-on

VFB 1.65 V

3.8

µs

VFB = 0.6 V

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