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STCH02 数据表(PDF) 8 Page - STMicroelectronics

部件名 STCH02
功能描述  Offline PWM controller for ultra-low standby adapters
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STCH02 数据表(HTML) 8 Page - STMicroelectronics

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Device description and block diagram
STCH02
8/24
DocID028766 Rev 1
TD-ON
Turn-on delay time after triggering
VGATE = 6 V, CGATE = 1 nF
270
ns
TFORCE
Force turn-on time after blanking
10
14
µs
Gate driver
VGDL
Output high voltage
VDD = 8.5 V; IGATE = 5 mA
7
V
IGATE = 5 mA
10.5
13
TRISE
Rising time
CGATE = 1 nF
70
110
150
ns
TFALL
Falling time
CGATE = 1 nF
20
40
60
ns
VGDL
Output low voltage
IGD-SINK = 50 mA
1
V
Line feedforward
RFF
Equivalent feedforward resistor
IZCD = 1 mA
63
70
77
Feedback input
VFBH
Upper saturation
3.45
V
HFB
Current sense gain
3.22
3.29
3.36
IFB
Feedback source current
70
100
130
µA
VFBB
Burst mode threshold
Voltage falling
0.54
0.6
0.66
V
VFBF
Exit burst mode threshold
0.64
0.72
0.8
V
VHYST
Burst mode hysteresis
50
65
75
mV
Current reference
VREFx
Maximum value
Internal, not measured
0.8
V
KI
Current loop gain
0.19
0.2
0.21
V
Overvoltage protection
VOVP
OVP threshold
2.375
2.5
2.625
V
NOVP
Consecutive cycles for OVP triggering
VOVP = 2.5 V
4
Current sense
TLEB
Leading edge blanking
VGATE = 6 V, COUT = 1 nF
270
380
490
ns
TD
Gate delay to output
VGATE = 6 V, COUT = 1 nF
150
ns
VCSx
Max. clamp value
dVCS/dt = 200 mV/µs
0.7
0.75
0.8
V
VOCP
Hiccup mode OCP level
0.95
1
1.05
V
VSENSE_BM Minimum burst mode sense voltage
72
mV
Table 5. Electrical characteristics
(Tj = - 25° to 125 °C, VDD = 14 V, unless otherwise specified) (continued)
Symbol
Parameter
Test condition
Min.
Typ. Max.
Unit



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