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STM32F479AI 数据表(PDF) 91 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 91 Page - STMicroelectronics |
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91 / 208 page ![]() DocID028010 Rev 2 91/208 STM32F479xx Electrical characteristics 187 5.3.2 VCAP1/VCAP2 external capacitor Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to the VCAP1/VCAP2 pins. CEXT is specified in Table 19. Figure 24. External capacitor CEXT 1. Legend: ESR is the equivalent series resistance. Table 18. Limitations depending on the operating power supply range Operating power supply range ADC operation Maximum Flash memory access frequency with no wait states (fFlashmax) Maximum HCLK frequency vs. Flash memory wait states (1)(2) I/O operation Possible Flash memory operations VDD = 1.7 to 2.1 V(3) Conversion time up to 1.2 Msps 20 MHz(4) 168 MHz with 8 wait states and over-drive OFF No I/O compensation 8-bit erase and program operations only VDD = 2.1 to 2.4 V 22 MHz 180 MHz with 8 wait states and over-drive ON 16-bit erase and program operations VDD = 2.4 to 2.7 V Conversion time up to 2.4 Msps 24 MHz 180 MHz with 7 wait states and over-drive ON I/O compensation works 16-bit erase and program operations VDD = 2.7 to 3.6 V(5) 30 MHz 180 MHz with 5 wait states and over-drive ON 32-bit erase and program operations 1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is required. 2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state program execution. 3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.19.2). 4. Prefetch is not available. 5. When VDDUSB is connected to VDD, the voltage range for USB full speed PHYs can drop down to 2.7 V. However the electrical characteristics of D- and D+ pins will be degraded between 2.7 and 3 V. |
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