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STM32F479AI 数据表(PDF) 93 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 93 Page - STMicroelectronics |
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93 / 208 page ![]() DocID028010 Rev 2 93/208 STM32F479xx Electrical characteristics 187 Table 22. Reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 PLS[2:0]=101 (falling edge) 2.65 2.84 2.92 PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 VPVDhyst(1) PVD hysteresis - - 100 - mV VPOR/PDR Power-on/power-down reset threshold Falling edge 1.60 1.68 1.76 V Rising edge 1.64 1.72 1.80 VPDRhyst(1) PDR hysteresis - - 40 - mV VBOR1 Brownout level 1 threshold Falling edge 2.13 2.19 2.24 V Rising edge 2.23 2.29 2.33 VBOR2 Brownout level 2 threshold Falling edge 2.44 2.50 2.56 Rising edge 2.53 2.59 2.63 VBOR3 Brownout level 3 threshold Falling edge 2.75 2.83 2.88 Rising edge 2.85 2.92 2.97 VBORhyst(1) BOR hysteresis - - 100 - mV TRSTTEMPO(1)(2) POR reset temporization - 0.5 1.5 3.0 ms IRUSH(1) InRush current on voltage regulator power-on (POR or wakeup from Standby) - - 160 200 mA ERUSH(1) InRush energy on voltage regulator power-on (POR or wakeup from Standby) VDD = 1.7 V, TA = 105 °C, IRUSH = 171 mA for 31 µs -- 5.4 µC 1. Guaranteed by design. 2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first instruction is read by the user application code. |
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