STM32F479AI datasheet(102/208 Pages) STMICROELECTRONICS

102 / 208 page

Electrical characteristics

STM32F479xx

102/208

DocID028010 Rev 2

Table 30. Typical and maximum current consumption in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.3 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM ON, RTC and

LSE oscillator OFF

1.7

2.5

2.9

6(3)

35(3)

µA

Backup SRAM OFF, RTC and

LSE oscillator OFF

1.0

1.8

2.20

5(3)

30(3)

Backup SRAM OFF, RTC ON

and LSE oscillator in Power

Drive mode

1.7

2.7

3.2

Backup SRAM ON, RTC ON

and LSE oscillator in Power

Drive mode

2.4

3.4

4.0

Backup SRAM ON, RTC ON

and LSE oscillator in High

Drive mode

3.2

4.2

4.8

Backup SRAM OFF, RTC ON

and LSE oscillator in High

Drive mode

2.5

3.5

4.1

1. PDR is off for VDD=1.7 V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by

additional 1.2 μA

2. Based on characterization, not tested in production unless otherwise specified.

3. Based on characterization, tested in production.

STM32F479AI 数据表(PDF) 102 Page - STMicroelectronics

STM32F479AI 数据表(HTML) 102 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载

链接网址

STM32F479AI 数据表(PDF) 102 Page - STMicroelectronics

STM32F479AI 数据表(HTML) 102 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表 下载

链接网址

数据表下载