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b

b

b

Storage Temperature Range

b

Power Dissipation (PD)

500 mW

Lead Temperature (Soldering 10 sec)

260 C

Operation Conditions

Min

Max

Unit

45

55

V

22

V

DC Input or Output Voltage

00

V

b

40

a

85

C

Electr-Static Discharge Rating TBD

1

kV

Transistor Count

15200

Typical Values

DC Electrical Characteristics

Symbol

Parameter

Conditions

Min

Max

Units

High Level Input Voltage

Any Inputs Except OSC IN

20

V

(Note 4)

OSC IN with External Clock

V

Low Level Input Voltage

All Inputs Except OSC IN

08

V

OSC IN with External Clock

01

V

High Level Output Voltage

V

(Excluding OSC OUT)

35

V

Low Level Output Voltage

01

V

(Excluding OSC OUT)

025

V

Input Current (Except OSC IN)

g

10

m

A

Output TRI-STATE Current

g

50

m

A

Output High Leakage Current

g

50

m

A

T1 MFO INTR Pins

Outputs Open Drain

Quiescent Supply Current

(Note 7)

260

m

A

10

mA

120

mA

49152 MHz

8

mA

20

mA

Quiescent Supply Current

(Single Supply Mode)

(Note 7)

80

m

A

75

mA

4194304 MHz

Standby Mode Battery

Supply Current

(Note 8)

10

m

A

400

m

A

4194304 MHz

Battery Supply Leakage

Other Pins at GND

15

m

A

b

5

m

A

Note 1

Absolute Maximum Ratings are those values beyond which damage to the device may occur

Note 2

Unless otherwise specified all voltages are referenced to ground

Note 3

Single Supply Mode Data retention voltage is 22V min

Note 4

Note 5

Note 6

Note 7

configured as buffered oscillator out and MFO T1 INTR are configured as open drain

Note 8

pin is not configured as buffered oscillator out

2