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6ED003L02-F2 数据表(PDF) 9 Page - Infineon Technologies AG

部件名 6ED003L02-F2
功能描述  High voltage gate driver IC
PDF  20 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

6ED003L02-F2 数据表(HTML) 9 Page - Infineon Technologies AG

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EiceDRIVER™
6ED003L06-F2, 6ED003L02-F2
datasheet
9
<Revision 2.8>, 05.08.2016
3.4
ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11)
The 6ED family
– 2
nd generation provides an over-current detection function by connecting the ITRIP input with
the motor current feedback. The ITRIP comparator threshold (typ 0.44 V) is referenced to VSS ground. A input
noise filter (typ. tITRIPMIN = 230 ns) prevents the driver to detect false over-current events.
Over-current detection generates a hard shut down of all outputs of the gate driver and provides a latched fault
feedback at /FAULT pin. RCIN input/output pin is used to determine the reset time of the fault condition. As
soon as ITRIP threshold is exceeded the external capacitor connected to RCIN is fully discharged. The
capacitor is then recharged by the RCIN current generator when the over-current condition is finished. As soon
as RCIN voltage exceeds the rising threshold of typ VRCIN,TH = 5.2 V, the fault condition releases and the driver
returns operational following the ontrol input pins according to section 3.1.
3.5
VCC, VSS and COM (Low Side Supply, Pin 1, 12,13)
VCC is the low side supply and it provides power both to input logic and to low side output power stage. Input
logic is referenced to VSS ground as well as the under-voltage detection circuit. Output power stage is
referenced to COM ground. COM ground is floating respect to VSS ground with a maximum range of operation
of +/-5.7 V. A back-to-back zener structure protects grounds from noise spikes.
The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than
VCCUV+ is present.
The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below VCCUV- = 9.8 V.
This prevents the external power switches from critically low gate voltage levels during on-state and therefore
from excessive power dissipation. Please consult the individual output characteristic of the driven transistor.
3.6
VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28)
VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the
external high side power device emitter/source voltage. Due to the low power consumption, the floating driver
stage can be supplied by bootstrap topology connected to VCC. The device operating area as a function of the
supply voltage is given in Figure 12.
3.7
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27)
Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT
and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high
side outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage
condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side
output, while after a under voltage condition of the VCC supply, the low side outputs switch to the state of their
respective inputs.



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