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6ED003L02-F2 数据表(PDF) 13 Page - Infineon Technologies AG |
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6ED003L02-F2 数据表(HTML) 13 Page - Infineon Technologies AG |
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13 / 20 page ![]() EiceDRIVER™ 6ED003L06-F2, 6ED003L02-F2 datasheet 13 <Revision 2.8>, 05.08.2016 Table 6 Static parameters Parameter Symbol Values Unit Test condition Min. Typ. Max. High side leakage current betw. VS and VSS ILVS+ - 1 12.5 µA VS = 600V High side leakage current betw. VS and VSS ILVS+ 1 - 10 - TJ = 125°C, VS = 600V High side leakage current between VSx and VSy (x=1,2,3 and y=1,2,3) ILVS– 1 - 10 - TJ = 125°C VSx - VSy = 600V Quiescent current VBS supply (VB only) IQBS1 - 210 400 µA HO=low Quiescent current VBS supply (VB only) IQBS2 - 210 400 HO=high Quiescent current VCC supply (VCC only) IQCC1 - 1.1 1.8 mA VLIN=float. Quiescent current VCC supply (VCC only) IQCC2 - 1.3 2 VLIN=0, VHIN=3.3 V Input bias current ILIN+ - 70 100 µA VLIN=3.3 V Input bias current ILIN- - 110 200 µA VLIN=0 Input bias current IHIN+ - 70 100 VHIN=3.3 V Input bias current IHIN- - 110 200 VHIN=0 Input bias current (ITRIP=high) IITRIP+ 45 120 VITRIP=3.3 V Input bias current (EN=high) IEN+ - 45 120 VENABLE=3.3 V Input bias current RCIN (internal current source) IRCIN 2.8 VRCIN = 2 V Mean output current for load capacity charging in range from 3 V (20%) to 6 V (40%) IO+ 120 165 - mA CL=10 nF Peak output current turn on (single pulse) IOpk+ 1 240 RL = 0 , tp <10 µs Mean output current for load capacity discharging in range from 12 V (80%) to 9 V (60%) IO- 250 375 - CL=10 nF Peak output current turn off (single pulse) IOpk- 1 420 RL = 0 , tp <10 µs RCIN low on resistance of the pull down transistor Ron,RCIN - 40 100 VRCIN=0.5 V FAULT low on resistance of the pull down transistor Ron,FLT - 45 100 VFAULT=0.5 V 1 Not subject of production test, verified by characterisation |
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