Data Sheet

13

2.2, 2016-01-27

TLE7183F

Description and Electrical Characteristics

dump during INH mode, the negative voltage across CB2 will be clamped to -31 V (CB2 referenced to VDH).

5.1.4

Electrical Characteristics

Electrical Characteristics MOSFET drivers - DC Characteristics

V

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

5.1.1

Low level output voltage

–

–

0.2

V

I=30mA

5.1.2

7.5

–

13

V

I=-2mA; Vs=5.5..8V

5.1.3

6.5

–

13

V

I=-2mA; Vs=5.5..8V

5.1.4

High level output voltage

9

–

13

V

I=-2mA; Vs=8..20V

5.1.5

–

–

1.0

V

I=-100mA; Vs=20V

5.1.6

Gate drive output voltage (device

disabled via ENAx)

–

–

0.2

V

Disabled;

Vs=5.5..20V;

I=10mA

5.1.7

Gate drive output voltage

Tj=-40°C

Tj=25°C

Tj=150°C

––

1.4

1.2

1.0

V

UVLO; Vs<=5.5V

5.1.8

Gate drive output voltage high side

Tj=-40°C

Tj=25°C

Tj=150°C

––

1.4

1.2

1.0

VOvervoltage

5.1.9

–

–

0.2

V

Overvoltage

5.1.10

––

1.0

V

–

5.1.11

High level input voltage of Ixx,

ENAx

2.0

––V

–

5.1.12

Low level input voltage of INH

–

–

0.75

V

–

5.1.13

High level input voltage of INH

2.1

––V

–

5.1.14

Input hysteresis of IHx, ILx, ENAx

50

–

–

mV

Vs=5.5..8V

5.1.15

Input hysteresis of IHx, ILx, ENAx

100

200

–-

mV

Vs=8..20V

5.1.16

Output bias current SHx

0.3

1.0

1.6

mA

VSHx=0..(Vs+1);

ILx=low; IHx=high

5.1.17

Output bias current SLx

0.3

1.0

1.6

mA

VSLx=0..7V;

ILx=low; IHx=high