Data Sheet

25

2.2, 2016-01-27

TLE7183F

Application Description

6.1

Layout Guide Lines

Please refer also to the simplified application example.

•

•

•

bridges and should be placed very close to it

•

The components within one half bridge should be placed close to each other: high side MOSFET, low side

a loop that should be as small and tight as possible. The traces should be short and wide

•

The three half bridges can be seperated; yet, when there is one common GND referenced shunt resistor for

the three half bridges the sources of the three low side MOSFETs should be close to each other and close to

the common shunt resistor

•

VDH is the sense pin used for short circuit detection; VDH should be routed (via Rvdh) to the common point

of the drains of the high side MOSFETs to sense the voltage present on drain high side

•

CB2 is the buffer capacitor of charge pump 2; its negative terminal should be routed to the common point of

the drains of the high side MOSFETs as well - this connection should be low inductive / resistive

•

Additional R-C snubber circuits (R and C in series) can be placed to attenuate/suppress oscillations during

switching of the MOSFETs, there may be one or two snubber circuits per half bridge, R (several Ohm) and C

(several nF) must be low inductive in terms of routing and packaging (ceramic capacitors)

•

the exposed pad on the backside of the VQFN should be connected to GND

6.2

Further Application Information

•

For further information you may contact http://www.infineon.com/