TLE7183SCD2 datasheet(14/28 Pages) INFINEON

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TLE7183F

Description and Electrical Characteristics

Data Sheet

2.2, 2016-01-27

Electrical Characteristics MOSFET drivers - Dynamic Characteristics

S = 5.5 to 20V, Tj = -40 to +150°C, FPWM < 25kHz, all voltages with respect to ground, positive current flowing into pin

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

5.1.18

Min. internal dead time

DT_MIN

–

200

DT pin to GND

(RDT=0Ω)

5.1.19

Programmable internal dead time

0.26

0.64

1.07

2.02

0.41

1.05

1.85

3.82

0.56

1.45

2.63

5.62

µs

RDT=10 kΩ

RDT=47 kΩ

RDT=100 kΩ

RDT=1000 kΩ

5.1.20

Max. internal dead time

DT_MAX

2.33

–

6.35

µs

DT pin open

5.1.21

Turn on current, peak

G(on)

–

0.8

–

VGxx-VSxx=0V;

Vs=5.5..8V;

C=22nF;

RLoad=1Ω

5.1.22

Turn on current, peak

G(on)

–

1.5

–

VGxx-VSxx=0V;

Vs=8..20V

C=22nF;

RLoad=1Ω

5.1.23

Turn off current, peak

G(off)

–

1.5

–

VGxx-VSxx=10V;

Vs=8..20V

C=22nF;

RLoad=1Ω

5.1.24

Rise time (20-80%)

Tj = -40°C

Tj = 25°C

Tj = 150°C

G_rise

–

150

400

700

C=22nF; RLoad=1Ω

5.1.25

Fall time (20-80%)

Tj = -40°C

Tj = 25°C

Tj = 150°C

G_fall

–

150

230

500

C=22nF; RLoad=1Ω

5.1.26

Input propagation time (low on)

P(ILN)

190

290

C=22nF; RLoad=1Ω

5.1.27

Input propagation time (low off)

P(ILF)

100

200

C=22nF; RLoad=1Ω

5.1.28

Input propagation time (high on)

P(IHN)

190

290

C=22nF; RLoad=1Ω

5.1.29

Input propagation time (high off)

P(IHF)

100

200

C=22nF; RLoad=1Ω

5.1.30

Absolute input propagation time

difference (all channels turn on)

P(an)

–

C=22nF; RLoad=1Ω

5.1.31

Absolute input propagation time

difference (all channels turn off)

P(af)

–

C=22nF; RLoad=1Ω

5.1.32

Absolute input propagation time

difference (1channel high off - low

on)

P(1hfln)

–

150

C=22nF; RLoad=1Ω

5.1.33

Absolute input propagation time

difference (1channel low off - high

on)

P(1lfhn)

–

150

C=22nF; RLoad=1Ω

TLE7183SCD2 数据表(PDF) 14 Page - Infineon Technologies AG

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