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SST25VF080B 数据表(PDF) 21 Page - Microchip Technology |
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SST25VF080B 数据表(HTML) 21 Page - Microchip Technology |
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21 / 32 page ![]() 2015 Microchip Technology Inc. DS20005045C-page 21 SST25VF080B 5.1 Power-Up Specifications All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0v - 3.0V in less than 300 ms). See Table 5-7 and Figure 5-4 for more information. FIGURE 5-4: POWER-UP TIMING DIAGRAM TABLE 5-7: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ 1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 100 µs TPU-WRITE 1 VDD Min to Write Operation 100 µs Time VDD Min VDD Max VDD Device fully accessible TPU-READ TPU-WRITE Chip selection is not allowed. Commands may not be accepted or properly interpreted by the device. 1296 PwrUp.0 |
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