SST25VF080B datasheet(18/32 Pages) MICROCHIP

18 / 32 page

SST25VF080B

DS20005045C-page 18

 2015 Microchip Technology Inc.

5.0

ELECTRICAL SPECIFICATIONS

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-

mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-

tional operation of the device at these conditions or conditions greater than those defined in the operational

sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may

affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

1. Output shorted for no more than one second. No more than one output shorted at a time.

TABLE 5-1:

OPERATING RANGE

Range

Ambient Temp

VDD

Commercial

0°C to +70°C

2.7-3.6V

Industrial

-40°C to +85°C

2.7-3.6V

TABLE 5-2:

AC CONDITIONS OF TEST1

1. See Figures 5-5 and 5-6

Input Rise/Fall Time

Output Load

5ns

CL = 30 pF

TABLE 5-3:

DC OPERATING CHARACTERISTICS

Symbol

Parameter

Limits

Test Conditions

Min

Max

Units

IDDR

Read Current

CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open

IDDR2

Read Current

CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open

IDDW

Program and Erase Current

CE#=VDD

ISB

Standby Current

µA

CE#=VDD, VIN=VDD or VSS

ILI

Input Leakage Current

1µA

VIN=GND to VDD, VDD=VDD Max

ILO

Output Leakage Current

1µA

VOUT=GND to VDD, VDD=VDD Max

VIL

Input Low Voltage

0.8

VDD=VDD Min

VIH

Input High Voltage

0.7 VDD

VDD=VDD Max

VOL

Output Low Voltage

0.2

IOL=100 µA, VDD=VDD Min

VOL2

Output Low Voltage

0.4

IOL=1.6 mA, VDD=VDD Min

VOH

Output High Voltage

VDD-0.2

IOH=-100 µA, VDD=VDD Min

TABLE 5-4:

CAPACITANCE (TA = 25°C, F=1 MHz, OTHER PINS OPEN)

Parameter

Description

Test Condition

Maximum

COUT

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Output Pin Capacitance

VOUT = 0V

12 pF

CIN

Input Capacitance

VIN = 0V

6 pF

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