STM32F413RHT6 datasheet(121/207 Pages) STMICROELECTRONICS

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STM32F413xG/H

Electrical characteristics

174

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,

executing EEMBC code, is running. This emission test is compliant with IEC61967-2

standard which specifies the test board and the pin loading.

6.3.14

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 54. EMI characteristics for LQFP144

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

8/100 MHz

SEMI

Peak level

VDD = 3.6 V, TA = 25 °C, LQFP144

package, conforming to IEC 61967-2,

EEMBC, ART ON, all peripheral clocks

enabled, clock dithering disabled.

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI Level

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