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STM32F413RHT6 数据表(PDF) 123 Page - STMicroelectronics |
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STM32F413RHT6 数据表(HTML) 123 Page - STMicroelectronics |
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123 / 207 page ![]() DocID029162 Rev 2 123/207 STM32F413xG/H Electrical characteristics 174 Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. 6.3.16 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 58 are derived from tests performed under the conditions summarized in Table 16. All I/Os are CMOS and TTL compliant. Table 57. I/O current injection susceptibility(1) Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ Injected current on BOOT0, PDR_ON, BYPASS_REG - 0 0 mA Injected current on NRST - 0 NA Injected current on PE6, PC13, PC14, PC15, PF0, PF1, PF2, PC0, PC1, PC2, PC3 - 0 NA Injected current on any other FT and FTf pins - 5 NA Injected current on any other pins - 5 + 5 1. NA = not applicable . Table 58. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL FT, TTa, TC and NRST I/O input low level voltage 1.7 V≤VDD≤3.6 V - - 0.3VDD(1) V BOOT0 I/O input low level voltage 1.75 V≤VDD ≤3.6 V, -40 °C≤TA ≤125 °C -- 0.1VDD+0.1(2) 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤125 °C -- VIH FT, TTa, TC and NRST I/O input high level voltage(5) 1.7 V≤VDD≤3.6 V 0.7VDD(1) -- V BOOT0 I/O input high level voltage 1.75 V≤VDD ≤3.6 V, -40 °C≤TA ≤125 °C 0.17VDD+0.7(2) -- 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤125 °C VHYS FT, TTa, TC and NRST I/O input hysteresis 1.7 V≤VDD≤3.6 V 10% VDD(2)(3) -- V BOOT0 I/O input hysteresis 1.75 V≤VDD ≤3.6 V, -40 °C≤TA ≤125 °C 0.1 - - 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤125 °C |
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