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STM32F413RHT6 数据表(PDF) 123 Page - STMicroelectronics

部件名 STM32F413RHT6
功能描述  ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs
PDF  207 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F413RHT6 数据表(HTML) 123 Page - STMicroelectronics

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STM32F413xG/H
Electrical characteristics
174
Note:
It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
6.3.16
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 58 are derived from tests
performed under the conditions summarized in Table 16. All I/Os are CMOS and TTL
compliant.
Table 57. I/O current injection susceptibility(1)
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on BOOT0, PDR_ON, BYPASS_REG
- 0
0
mA
Injected current on NRST
- 0
NA
Injected current on PE6, PC13, PC14, PC15, PF0, PF1,
PF2, PC0, PC1, PC2, PC3
- 0
NA
Injected current on any other FT and FTf pins
- 5
NA
Injected current on any other pins
- 5
+ 5
1. NA = not applicable
.
Table 58. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
FT, TTa, TC and NRST I/O input
low level voltage
1.7 VVDD3.6 V
-
-
0.3VDD(1)
V
BOOT0 I/O input low level
voltage
1.75 VVDD 3.6 V,
-40 °CTA 125 °C
--
0.1VDD+0.1(2)
1.7 VVDD 3.6 V,
0 °CTA 125 °C
--
VIH
FT, TTa, TC and NRST I/O input
high level voltage(5)
1.7 VVDD3.6 V
0.7VDD(1)
--
V
BOOT0 I/O input high level
voltage
1.75 VVDD 3.6 V,
-40 °CTA 125 °C
0.17VDD+0.7(2)
--
1.7 VVDD 3.6 V,
0 °CTA 125 °C
VHYS
FT, TTa, TC and NRST I/O input
hysteresis
1.7 VVDD3.6 V
10% VDD(2)(3)
--
V
BOOT0 I/O input hysteresis
1.75 VVDD 3.6 V,
-40 °CTA 125 °C
0.1
-
-
1.7 VVDD 3.6 V,
0 °CTA 125 °C



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