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MIC4607 数据表(PDF) 26 Page - Microchip Technology |
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MIC4607 数据表(HTML) 26 Page - Microchip Technology |
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26 / 42 page ![]() MIC4607 DS20005610A-page 26 2016 Microchip Technology Inc. FIGURE 6-6: Optional External Bootstrap Diode. 6.5 Gate Driver Power Dissipation Power dissipation in the output driver stage is mainly caused by charging and discharging the gate to source and gate to drain capacitance of the external MOSFET. Figure 6-7 shows a simplified equivalent circuit of the MIC4607 driving an external high-side MOSFET. FIGURE 6-7: MIC4607 Driving an External High-Side MOSFET. 6.5.1 DISSIPATION DURING THE EXTERNAL MOSFET TURN-ON Energy from capacitor CB is used to charge up the input capacitance of the MOSFET (CGD and CGS). The energy delivered to the MOSFET is dissipated in the three resistive components, RON, RG and RG_FET. RON is the on resistance of the upper driver MOSFET in the MIC4607. RG is the series resistor (if any) between the driver and the MOSFET. RG_FET is the gate resistance of the MOSFET and is typically listed in the power MOSFET’s specifications. The ESR of capacitor CB and the resistance of the connecting etch can be ignored since they are much less than RON and RG_FET. The effective capacitances of CGD and CGS are difficult to calculate because they vary non-linearly with ID, VGS, and VDS. Fortunately, most power MOSFET spec- ifications include a typical graph of total gate charge versus VGS. Figure 6-8 shows a typical gate charge curve for an arbitrary power MOSFET. This chart shows that for a gate voltage of 10V, the MOSFET requires about 23.5 nC of charge. The energy dissi- pated by the resistive components of the gate drive cir- cuit during turn-on is calculated as: EQUATION 6-4: but EQUATION 6-5: so, EQUATION 6-6: FIGURE 6-8: Typical Gate Charge vs. VGS. E 1 2 --- C ISS V GS 2 = Where: CISS Total gate capacitance of the MOSFET. QC V = E 1 2 --- Q G V GS = |
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