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MIC4607 数据表(PDF) 26 Page - Microchip Technology

部件名 MIC4607
功能描述  85V, Three-Phase MOSFET Driver with Adaptive Dead-Time, Anti-Shoot-Through and Overcurrent Protection
PDF  42 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MIC4607 数据表(HTML) 26 Page - Microchip Technology

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MIC4607
DS20005610A-page 26
 2016 Microchip Technology Inc.
FIGURE 6-6:
Optional External Bootstrap
Diode.
6.5
Gate Driver Power Dissipation
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 6-7 shows a simplified equivalent circuit of the
MIC4607 driving an external high-side MOSFET.
FIGURE 6-7:
MIC4607 Driving an
External High-Side MOSFET.
6.5.1
DISSIPATION DURING THE
EXTERNAL MOSFET TURN-ON
Energy from capacitor CB is used to charge up the input
capacitance of the MOSFET (CGD and CGS). The
energy delivered to the MOSFET is dissipated in the
three resistive components, RON, RG and RG_FET. RON
is the on resistance of the upper driver MOSFET in the
MIC4607. RG is the series resistor (if any) between the
driver and the MOSFET. RG_FET is the gate resistance
of the MOSFET and is typically listed in the power
MOSFET’s specifications. The ESR of capacitor CB
and the resistance of the connecting etch can be
ignored since they are much less than RON and
RG_FET.
The effective capacitances of CGD and CGS are difficult
to calculate because they vary non-linearly with ID,
VGS, and VDS. Fortunately, most power MOSFET spec-
ifications include a typical graph of total gate charge
versus VGS. Figure 6-8 shows a typical gate charge
curve for an arbitrary power MOSFET. This chart
shows that for a gate voltage of 10V, the MOSFET
requires about 23.5 nC of charge. The energy dissi-
pated by the resistive components of the gate drive cir-
cuit during turn-on is calculated as:
EQUATION 6-4:
but
EQUATION 6-5:
so,
EQUATION 6-6:
FIGURE 6-8:
Typical Gate Charge vs.
VGS.
E
1
2
--- C
ISS
V
GS
2
=
Where:
CISS
Total gate capacitance of the MOSFET.
QC
V
=
E
1
2
--- Q
G
V
GS
=



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