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MIC4607 数据表(PDF) 27 Page - Microchip Technology

部件名 MIC4607
功能描述  85V, Three-Phase MOSFET Driver with Adaptive Dead-Time, Anti-Shoot-Through and Overcurrent Protection
PDF  42 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MIC4607 数据表(HTML) 27 Page - Microchip Technology

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 2016 Microchip Technology Inc.
DS20005610A-page 27
MIC4607
The same energy is dissipated by ROFF, RG, and
RG_FET when the driver IC turns the MOSFET off.
Assuming RON is approximately equal to ROFF, the total
energy and power dissipated by the resistive drive ele-
ments is:
EQUATION 6-7:
and
EQUATION 6-8:
6.6
Supply Current Power Dissipation
Power is dissipated in the input and control sections of
the MIC4607, even if there is no external load. Current
is still drawn from the VDD and HB pins for the internal
circuitry, the level shifting circuitry, and shoot-through
current in the output drivers. The VDD and VHB currents
are proportional to operating frequency and the VDD
and VHB voltages. The Typical Performance Curves
show how supply current varies with switching fre-
quency and supply voltage.
The power dissipated by the MIC4607 due to supply
current is:
EQUATION 6-9:
Values for IDD and IHB are found in the EC table and the
typical characteristics graphs.
6.7
Total Power Dissipation and
Thermal Considerations
Total power dissipation in the MIC4607 is equal to the
power dissipation caused by driving the external MOS-
FETs, the supply currents and the internal bootstrap
diodes.
EQUATION 6-10:
Where:
EDRIVER = Energy dissipated per switching cycle.
PDRIVER = Power dissipated per switching cycle.
QG = Total gate charge at VGS.
VGS = Gate-to-source voltage on the MOSFET.
fS = Switching frequency of the gate drive circuit.
The power dissipated in the driver equals the ratio of
RON and ROFF to the external resistive losses in RG
and RG_FET. Letting RON = ROFF, the power dissipated
in the driver due to driving the external MOSFET is:
EQUATION 6-11:
There are six MOSFETs driven by the MIC4607. The
power dissipation for each of the drivers must be calcu-
lated and summed to obtain the total driver diode power
dissipation for the package.
In some cases, the high-side FET of one phase may be
pulsed at a frequency, fS, while the low-side FET of the
other phase is kept continuously on. Since the MOS-
FET gate is capacitive, there is no driver power if the
FET is not switched. The operation of all driver outputs
must be considered to accurately calculate power dis-
sipation.
The die temperature can be calculated after the total
power dissipation is known.
EQUATION 6-12:
Where:
TA = Maximum ambient temperature.
TJ = Junction temperature (°C).
PdissTOTAL = Total power dissipation of the MIC4607.
ΘJA = Thermal resistance from junction to ambient air.
6.8
Other Timing Considerations
Make sure the input signal pulse width is greater than
the minimum specified pulse width. An input signal that
is less than the minimum pulse width may result in no
output pulse or an output pulse whose width is signifi-
cantly less than the input.
The maximum duty cycle (ratio of high-side on-time to
switching period) is controlled by the minimum pulse
width of the low side and by the time required for the CB
capacitor to charge during the off-time. Adequate time
must be allowed for the CB capacitor to charge up
before the high-side driver is turned on.
6.9
Decoupling and Bootstrap
Capacitor Selection
Decoupling capacitors are required for both the
low-side (VDD) and high-side (xHB) supply pins. These
capacitors supply the charge necessary to drive the
external MOSFETs and also minimize the voltage rip-
ple on these pins. The capacitor from xHB to xHS has
E
DRIVER
Q
G
V
GS
=
P
DRIVER
Q
G
V
GS
f
S
=
Pdiss
SUPPLY
V
DD
I
DD
V
HB
+
I
HB
=
Pdiss
TOTAL
Pdiss
SUPPLY
Pdiss
DRIVE
P
DIODE
++
=
Pdiss
DRIVER
P
DRIVER
R
ON
R
ON
R
G
R
G_FET
++
-------------------------------------------------
=
T
J
T
A
Pdiss
TOTAL
JA
+
=



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