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ZSC31150GAG2-R 数据表(PDF) 5 Page - Integrated Device Technology |
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ZSC31150GAG2-R 数据表(HTML) 5 Page - Integrated Device Technology |
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5 / 26 page ![]() ZSC31150 Datasheet © 2016 Integrated Device Technology, Inc. 5 December 6, 2016 1. Electrical Characteristics 1.1 Absolute Maximum Ratings The absolute maximum ratings are stress ratings only. The ZSC31150 might not function or be operable above the recommended operating conditions. Stresses exceeding the absolute maximum ratings might also damage the device. In addition, extended exposure to stresses above the recommended operating conditions might affect device reliability. IDT does not recommend designing to the “Absolute Maximum Ratings.” Parameters apply in operation temperature range and without time limitations. Table 1.1 Absolute Maximum Ratings No. Parameter Symbol Conditions Min Max Unit 1.1.1 Supply voltage [a] VDDE To VSSE. -33 33 VDC 1.1.2 Potential at the AOUT pin [a] VOUT Relative to VSSE. -33 33 VDC 1.1.3 Analog supply voltage [a] VDDA Relative to VSSA. VDDE - VDDA < 0.35V -0.3 6.5 VDC 1.1.4 Voltage at all analog and digital IO pins VA_IO VD_IO Relative to VSSA. -0.3 VDDA + 0.3 VDC 1.1.5 Storage temperature TSTG -55 150 C [a] Refer to the ZSC31150 Technical Note – High Voltage Protection for specification and detailed conditions for high voltage protection. 1.2 Operating Conditions All voltages are related to VSSA. See important table notes at the end of the table. Table 1.2 Operating Conditions No. Parameter Symbol Conditions Min Typ Max Unit 1.2.1 TQE ambient temperature range for part numbers ZSC31150xExx[a] TAMB_TQE TQE -40 150 C TQA ambient temperature range for part numbers ZSC31150xAxx[b] TAMB_TQA TQA -40 125 C TQI ambient temperature range for advanced performance[b] TAMB_TQI TQI -25 85 C 1.2.2 Supply voltage VDDE 4.5 5.0 5.5 VDC 1.2.3 Bridge resistance—Bridge Voltage Mode[b], [c] RBR_V 2 25 k 1.2.4 Bridge resistance—Bridge Current Excitation Mode[b], [c] RBR_C See specification 1.2.6 for IBR_MAX 10 k 1.2.5 Current reference resistor[b],[d] RIBR IBR = VDDA / (16 * RIBR) 0.07 * RBR k 1.2.6 Maximum bridge current IBR_MAX 2 mA |
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