ZSC31150 Datasheet

© 2016 Integrated Device Technology, Inc.

6

December 6, 2016

No.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

1.2.7

Maximum bridge top voltage

V

1.2.8

TC current reference resistor[b]

Behavior influences current

generated

50

ppm/K

[a] Refer to the temperature profile description in the ZSC31150 Technical Note – Die and Package Specifications for operation in temperature

range > 125°C.

[b] No measurement in mass production; parameter is guaranteed by design and/or quality observation.

[c] Symmetric behavior and identical electrical properties (especially with regard to the low pass characteristic) of both sensor inputs of the

ZSC31150 are required. Unsymmetrical conditions of the sensor and/or external components connected to the sensor input pins of ZSC31150

can generate a failure in signal operation.

[d] See application circuit components in Table 3.1.

1.3 Electrical Parameters

All parameter values are valid for operating conditions specified in section 1.2 except as noted. All voltages related to VSSA. See important

table notes at the end of the table.

Table 1.3 Electrical Parameters

No.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

1.3.1

Supply Current and System Operation Conditions

1.3.1.1

Supply current

Without bridge and load

5.5

mA

1.3.1.2

Clock frequency [a]

Guaranteed adjustment range

(see the ZSC31150 Functional

Description for details);

2

3

4

MHz

1.3.2

Analog Front-End (AFE) Characteristics

1.3.2.1

Input span

Analog gain: 420 to 2.8

1

275

mV/V

1.3.2.2

Analog offset compensation

range

Depends on gain adjust; refer

to section 2.3.1

-300

300

1.3.2.3

Parasitic differential input offset

current [a]

-10

10

nA

-2

2

nA

1.3.2.4

Common mode input range

Depends on gain adjustment;

no XZC; see section 2.3.1

0.29 *

VDDA

0.65 *

VDDA

V

1.3.3

Temperature Measurement [b]

1.3.3.1

External temperature diode

channel gain

a

TSED

300

1300

ppm FS

/ (mV/V)

1.3.3.2

External temperature diode bias

current

6

10

20

A