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AM29F032B 数据表(PDF) 33 Page - Advanced Micro Devices |
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AM29F032B 数据表(HTML) 33 Page - Advanced Micro Devices |
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33 / 39 page ![]() 32 Am29F032B AC CHARACTERISTICS Write (Erase/Program) Operations—Alternate CE# Controlled Writes Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Parameter Symbol Parameter Description Speed Options Unit JEDEC Std -75 -90 -120 -150 t AVAV t WC Write Cycle Time (Note 1) Min 70 90 120 150 ns t AVEL t AS Address Setup Time Min 0 ns t ELAX t AH Address Hold Time Min 40 45 50 50 ns t DVEH t DS Data Setup Time Min 40 45 50 50 ns t EHDX t DH Address Hold Time Min 0 ns t GHEL t GHEL Read Recover Time Before Write Min 0 ns t WLEL t WS CE# Setup Time Min 0 ns t EHWH t WH CE# Hold Time Min 0 ns t ELEH t CP Write Pulse Width Min 40 45 50 50 ns t EHEL t CPH Write Pulse Width High Min 20 ns t WHWH1 t WHWH1 Byte Programming Operation (Note 2) Typ 7 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 1 sec Max 8 sec |
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