AM29F032B datasheet(10/39 Pages) AMD

10 / 39 page

Am29F032B

Characteristics” section contains timing specification

tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status

bits on DQ7–DQ0. Standard read cycle timings and I

read specifications apply. Refer to “The Erase Resume

command is valid only during the Erase Suspend

mode.” for more information, and to each AC Charac-

teristics section for timing diagrams.

Standby Mode

When the system is not reading or writing to the device,

it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the

outputs are placed in the high impedance state, inde-

pendent of the OE# input.

The device enters the CMOS standby mode when CE#

and RESET# pins are both held at V

CC ± 0.5 V. (Note

that this is a more restricted voltage range than V

IH.)

The device enters the TTL standby mode when CE#

and RESET# pins are both held at V

IH. The device re-

quires standard access time (t

CE) for read access when

the device is in either of these standby modes, before it

is ready to read data.

The device also enters the standby mode when the RE-

SET# pin is driven low. Refer to the next section, “RE-

SET#: Hardware Reset Pin”.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

In the DC Characteristics tables, I

CC3 represents the

standby current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset-

ting the device to reading array data. When the system

drives the RESET# pin low for at least a period of t

RP,

the device immediately terminates any operation in

progress, tristates all data output pins, and ignores all

read/write attempts for the duration of the RESET#

pulse. The device also resets the internal state ma-

chine to reading array data. The operation that was in-

terrupted should be reinitiated once the device is ready

to accept another command sequence, to ensure data

integrity.

Current is reduced for the duration of the RESET#

pulse. When RESET# is held at V

IL, the device enters

the TTL standby mode; if RESET# is held at V

SS ±

0.5 V, the device enters the CMOS standby mode.

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

If RESET# is asserted during a program or erase oper-

ation, the RY/BY# pin remains a “0” (busy) until the in-

ternal reset operation is complete, which requires a

time of t

READY (during Embedded Algorithms). The sys-

tem can thus monitor RY/BY# to determine whether the

reset operation is complete. If RESET# is asserted

when a program or erase operation is not executing

(RY/BY# pin is “1”), the reset operation is completed

within a time of t

READY (not during Embedded Algo-

rithms). The system can read data t

RH after the RE-

SET# pin returns to V

IH.

Refer to the AC Characteristics tables for RESET# pa-

rameters and timing diagram.

Output Disable Mode

When the OE# input is at V

IH, output from the device is

disabled. The output pins are placed in the high imped-

ance state.

AM29F032B 数据表(PDF) 10 Page - Advanced Micro Devices

AM29F032B 数据表(HTML) 10 Page - Advanced Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39

数据表下载