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STM32F411RET6 数据表(PDF) 67 Page - STMicroelectronics

部件名 STM32F411RET6
功能描述  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
PDF  149 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F411RET6 数据表(HTML) 67 Page - STMicroelectronics

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STM32F411xC STM32F411xE
Electrical characteristics
123
6.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 18: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
All I/O pins are in input mode with a static value at VDD or VSS (no load).
All peripherals are disabled except if it is explicitly mentioned.
The Flash memory access time is adjusted to both fHCLK frequency and VDD ranges
(refer to Table 15: Features depending on the operating power supply range).
The voltage scaling is adjusted to fHCLK frequency as follows:
Scale 3 for fHCLK ≤ 64 MHz
Scale 2 for 64 MHz < fHCLK ≤ 84 MHz
Scale 1 for 84 MHz < fHCLK ≤ 100 MHz
The system clock is HCLK, fPCLK1 = fHCLK/2, and fPCLK2 = fHCLK.
External clock is 4 MHz and PLL is ON except if it is explicitly mentioned.
The maximum values are obtained for VDD = 3.6 V and a maximum ambient
temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless
otherwise specified.
IRUSH(2)
In-Rush current on
voltage regulator power-
on (POR or wakeup from
Standby)
-
-
160
200
mA
ERUSH(2)
In-Rush energy on
voltage regulator power-
on (POR or wakeup from
Standby)
VDD = 1.7 V, TA = 125 °C,
IRUSH = 171 mA for 31 µs
--
5.4
µC
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design.
3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first
instruction is fetched by the user application code.
Table 19. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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