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STM32F411RET6 数据表(PDF) 86 Page - STMicroelectronics |
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STM32F411RET6 数据表(HTML) 86 Page - STMicroelectronics |
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86 / 149 page  Electrical characteristics STM32F411xC STM32F411xE 86/149 DocID026289 Rev 6 Figure 25. Typical application with a 32.768 kHz crystal 6.3.9 Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. High-speed internal (HSI) RC oscillator L Table 39. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = - 40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Guaranteed by design. -- 1 % Factory- calibrated TA = - 40 to 125 °C(3) 3. Guaranteed by characterization results. - 8 - 5.5 TA = - 40 to 105 °C(3) - 8 - 4.5 % TA = - 10 to 85 °C(3) - 4 - 4 % TA = 25 °C(4) 4. Factory calibrated non-soldered parts. - 1 - 1 % tsu(HSI)(2) HSI oscillator startup time -2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption -60 80 µA |
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