STNRGPF01 datasheet(27/40 Pages) STMICROELECTRONICS

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STNRGPF01

Electrical characteristics

5.3.3

Memory characteristics

Flash program and memory/data E2PROM.

General conditions: TA = -40 °C to 105 °C.

5.3.4

Input/output specifications

The STNRGPF01 device includes three different I/O types:



Normal I/Os (O or I)



Fast I/O (OP)



High speed I/O (CLOCK)

The STNRGPF01 I/Os are designed to withstand the current injection. For the negative

injection current of 4 mA, the resulting leakage current in the adjacent input does not exceed

1 µA.

Table 10. Flash program memory/data E2PROM

Symbol

Parameter

Conditions

Min.(1) Typ.(1) Max.(1)

Unit

tPROG

Standard programming time (including erase)

for byte/word/block (1 byte/4 bytes/128 bytes)

6.6

Fast programming time for 1 block (128

bytes)

3.3

tERASE Erase time for 1 block (128 bytes)

3.3

NWE

Erase/write cycles(2) (program memory)

TA = 25 °C

10 K

Cycles

Erase/write cycles(2)(data memory)

TA = 85 °C

100 K

TA = 105 °C

35 K

tRET

Data retention (program memory) after 10 K

erase/write cycles at TA = 25 °C

TRET = 85 °C

Years

Data retention (program memory) after 10 K

erase/write cycles at TA = 25 °C

TRET = 105 °C

Data retention (data memory) after 100 K

erase/write cycles at TA = 85 °C

TRET = 85 °C

Data retention (data memory) after 35 K

erase/write cycles at TA = 105 °C

TRET = 105 °C

IDDPRG

Supply current during program and erase

cycles

-40 ºC

 TA 105 ºC

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

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