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STR2P3LLH6 数据表(PDF) 7 Page - STMicroelectronics |
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STR2P3LLH6 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 12 page ![]() STR2P3LLH6 Electrical characteristics DocID024613 Rev 2 7/12 VSD 0.7 0 1 3 ISD(A) 2 (V) 0.5 4 0.6 0.8 0.9 Tj= 150°C Tj= -50°C Tj= 25°C 5 GIPD081020141131FSR Figure 8: Normalized V(BR)DSS vs temperature Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on-resistance vs. temperature Figure 12: Source-drain diode forward characteristics GIPG290820141412MT V(BR)DSS -75 TJ(°C) (norm) 25 75 0.92 0.94 0.96 0.98 ID=1m A 1 1.02 -25 125 175 1.04 1.06 1.08 C 400 200 0 20 VDS(V) 10 (pF) 0 600 800 Ciss Coss Crss GIPD071020141032FSR GIPG290820141351MT VGS(th) 0.9 0.7 0.6 0.4 -75 TJ(°C) (norm) 1 75 25 ID=250µ A 0.5 0.8 1.1 -25 125 175 GIPG290820141400MT RDS(on) 0.4 -75 TJ(°C) (norm) 75 25 0.6 0.8 1 1.2 1.4 VGS=10V 1.6 -25 125 175 |
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