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STR2P3LLH6 数据表(PDF) 3 Page - STMicroelectronics |
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STR2P3LLH6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STR2P3LLH6 Electrical ratings DocID024613 Rev 2 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tpcb = 25 °C 2 A ID Drain current (continuous) at Tpcb = 100 °C 1.2 A IDM (1) Drain current (pulsed) 8 A PTOT Total dissipation at Tpcb = 25 °C 0.35 W TJ Operating junction temperature 150 °C Tstg Storage temperature -55 to 150 °C Notes: (1)Pulse width limited by safe operating area Table 3: Thermal resistance Symbol Parameter Value Unit Rthj-pcb (1) Thermal resistance junction-pcb, single operation 357 °C/W Notes: (1)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec For the P-channel MOSFET the actual polarity of the voltages and the current must be reversed. |
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