STR2P3LLH6 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STR2P3LLH6

4/12

DocID024613 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage drain current

VGS = 0,

VDS = 30 V, TJ = 125 °C

µA

IGSS

Gate body leakage current

VGS = 0, VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 1 A

VGS = 4.5 V, ID = 1 A

0.048

0.075

0.056

0.09

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VDS = 25 V, f=1 MHz

VGS = 0

639

Coss

Output capacitance

Crss

Reverse transfer capacitance

Total gate charge

VDD = 15 V, ID = 2 A

VGS = 4.5 V

Qgs

Gate-source charge

1.9

Qgd

Gate-drain charge

2.1

Table 6: Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

Turn-on delay time

VDD = 15 V, ID = 2 A,

= 4.7 Ω, VGS = 10 V

5.4

Rise time

td (off)

Turn-off delay time

19.2

Fall time

3.4

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