STR2P3LLH6

Electrical characteristics

DocID024613 Rev 2

5/12

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VSD(1)

Forward on voltage

-

-

1.1

V

Reverse recovery time

di/dt = 100 A/µs,

-

-

11.2

ns

Reverse recovery charge

-

-

3.5

nC

Reverse recovery current

-

-

0.6

A

Notes:

For the P-channel MOSFET the actual polarity of the voltages and the current

must be reversed.